to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SD1994A transistor (npn) features z low collector to emitter saturation voltage z complementary pair with 2sb1322a z allowing supply with the radial taping maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) * v ce =10v, i c =0.5a 85 340 dc current gain h fe(2) * v ce =5v, i c =1a 50 collector-emitter saturation voltage v ce(sat) * i c =0.5a,i b =0.05a 0.4 v base-emitter voltage v be * v ce =0.5v, i c =0.05a 1.2 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =10v,i c = 0.05a, f=200mhz 200 mhz *pulse test classification of h fe rank q r s range 85-170 120-240 170-340 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2012
10 20 30 40 50 60 70 80 10 100 0.1 1 10 100 1000 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 875 0.1 1 10 100 1000 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 1000 0 200 400 600 800 1000 0.1 1 10 100 1000 02468101214 0 200 400 600 800 1000 3 500 i c f t ?? common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 2SD1994A i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 10v 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =0.5v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 3.5ma 3.15ma 2.8ma 2.45ma 2.1ma 1.75ma 0.7ma 1.05ma 1.4ma i b =0.35ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2012
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